Presentation Information
[15p-P09-2]Substrate Temperature Dependence of Dry Etching of Epitaxially Grown Si0.7Ge0.3 and Si using H2 Diluted CF4
〇Kotaro Ozaki1, Ibuki Saburi2, Takayoshi Tsutsumi3, Kenji Ishikawa3, Yuji Yamamoto4, Wei-Chen Wen4, Katsunori Makihara1 (1.Nagoya Univ. Eng., 2.Nagoya Univ., 3.Nagoya Univ. cLPS, 4.IHP)
Keywords:
Low-Temp. etching
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