[15p-P10-1~4] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[15p-P10-3] Study of Electroless plated CoMn diffusion barrier film

〇Shoso Shingubara¹, Yuko Ishii¹, takanobu hamamura¹, tomohiro shimizu¹, takeshi ito¹ (1.Kansai Univ)

Keywords:

diffusion barrier,electroless plating,cobalt alloy

Formation of continuous diffusion barrier film is important for Si TSVs. With a recent trend of miniaturization of TSVs, aspect ratio of TSV hole is becoming as large as 10, and the sputtering technology cannot provide continuous film. Electroless plated barrier films such as NiB and CoWB can form continous film, however, Cu diffusion barrier propterty were not sufficient. Recently we succeeded in the formation of electroless CoMn film using hydrazine hydrate reducinf agent. In this study, we report CoMn film properties such as crystalline structure, electrical resistivity and Cu diffusion barrier properties.