Presentation Information
[15p-P11-2]Optical Characteristics of Strained Quantum Well Structure Grown on InP/Si Substrates
〇(B)Mizuki Holt1 (1.Sophia Univ.)
Keywords:
semiconductor
Optical properties of strained quantum well structures evaluated by photoluminescence (PL) measurements, considering the effects of voids formed during the bonding of InP thin films and Si substrates.
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