Presentation Information
[15p-P12-10]Temperature dependence of β-Ga2O3 Schottky barrier diode during current switching using Raman spectroscopy
〇Wataru Furumoto1, Sho Hasegawa2, Kohei Sasaki2, Toshiyuki Isshiki1, Noriyuki Hasuike1 (1.Kyoto Inst., 2.NCT,Inc.)
Keywords:
raman spectroscopy,Gallium Oxide Schottky Barrier Diode
Gallium oxide (β-Ga2O3) is highly expected as a semiconductor material for next generation power devices because of its excellent material properties and ease of fabrication of large single crystals.
However, its low thermal conductivity poses a problem for heat dissipation.The development of β-Ga2O3 Schottky barrier diode (SBD) has been progressing rapidly in recent years, and vertical β-Ga2O3 SBD, like SiC, are expected to be put into practical use because of their relatively simple device structure. In this study, we focus on β-Ga2O3SBD and investigate their temperature dependence during current switching by Raman scattering spectroscopy.
However, its low thermal conductivity poses a problem for heat dissipation.The development of β-Ga2O3 Schottky barrier diode (SBD) has been progressing rapidly in recent years, and vertical β-Ga2O3 SBD, like SiC, are expected to be put into practical use because of their relatively simple device structure. In this study, we focus on β-Ga2O3SBD and investigate their temperature dependence during current switching by Raman scattering spectroscopy.
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