[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

English Presentation

[15p-P12-13] The Enhancements of Nitrogen-Doing ZnO for Effective p-Type Semiconductor Performance

〇(M1)Abrarul Haque¹, Haruki Ohmori¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane University)

Keywords:

Nitrogen doped,p-type ZnO,performance

Nitrogen-doped zinc oxide (ZnO) is gaining attention for its potential to enhance p-type semiconductor performance, which is crucial for optoelectronic devices and solar cells. The incorporation of nitrogen into ZnO improves its electronic properties and creates acceptor states that are essential for p-type conduction, effectively addressing these challenges ^[1]. The study explores the potential of nitrogen doping techniques in enhancing the electronic characteristics of zinc oxide (ZnO) for use in p-type semiconductor applications. The study explores the potential of nitrogen doping techniques in enhancing the electronic characteristics of zinc oxide (ZnO) for use in p-type semiconductor applications. The research outlines the modifications in c-axis length variations and the UV-vis transmittance spectra.