講演情報
[15p-P12-13]The Enhancements of Nitrogen-Doing ZnO for Effective p-Type Semiconductor Performance
〇(M1)Abrarul Haque1, Haruki Ohmori1, Shuhei Funaki1, Yasuji Yamada1 (1.Shimane University)
キーワード：
Nitrogen doped、p-type ZnO、performance
Nitrogen-doped zinc oxide (ZnO) is gaining attention for its potential to enhance p-type semiconductor performance, which is crucial for optoelectronic devices and solar cells. The incorporation of nitrogen into ZnO improves its electronic properties and creates acceptor states that are essential for p-type conduction, effectively addressing these challenges [1]. The study explores the potential of nitrogen doping techniques in enhancing the electronic characteristics of zinc oxide (ZnO) for use in p-type semiconductor applications. The study explores the potential of nitrogen doping techniques in enhancing the electronic characteristics of zinc oxide (ZnO) for use in p-type semiconductor applications. The research outlines the modifications in c-axis length variations and the UV-vis transmittance spectra.
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