[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-14] Electrical Characterization of co-doped with Zn and N ZnO Films

〇Haruki Ohmori¹, Abrarul Haque¹, Shuhei Funaki¹, Yasuji Yamada¹ (1.Shimane Univ.)

Keywords:

ZnO,N-doped,p-type

Zinc oxide (ZnO) has attracted attention as an alternative material to ITO used in p-n junction devices. However, it is difficult to fabricate p-type ZnO by adding acceptors to ZnO because of the formation of donor defects. On the other hand, it has been reported that the introduction of compound defects by co-doping acceptors and donors is effective for the fabrication of p-type ZnO. In this study, we investigated how the co-doping of acceptors and donors changes ZnO crystals.