[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-27] Improvement of transparent conductivity by annealing of Zr-doped ZnO thin films

〇(M1)kosuke Matsumoto¹, Ichiro Takano¹ (1.Grad School, Kogakuin Univ.)

Keywords:

Transparent Conductive Film,semiconductor,Zinc Oxide

Transparent oxides with high electrical conductivity are used in a wide range of fields and have become indispensable transparent electrode materials. Currently, ITO is the mainstream material widely used as transparent conducting film, but since In is a rare metal and its supply is unstable, research on alternatives is actively being conducted. However, since In is a rare metal and its supply is unstable, research on alternatives has been active. ZnO and SnO2 oxides are candidates as alternative materials, but their high resistivity is an issue. In this study, ZnO was used as a base material and doped with Zr, which has a crystal structure and electronegativity similar to that of ZnO. The ZnO oxide was annealed to evaluate its properties as a transparent conducting film.