Presentation Information
[15p-P12-35]Stable amorphous In2O3-based TFTs fabricated via room-temperature UV exposure and passivation formation
〇Shinri Yamadera1, Kanta Kibishi1, Ryota Kobayashi1, Kazuho Ishi1, Shinya Aikawa1 (1.Kogakuin Univ)
Keywords:
Thin film transistor,UV exposure,Hysteresis
Comment
To browse or post comments, you must log in.Log in