[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-37] Preparation and evaluation of MSM-type Ultraviolet sensors using Ga-Sn-O by sol-gel method

〇Yukimasa Ota¹, Tokiyoshi Matsuda¹, Ya Hsin Chen², Hung Yu Ou², Chien Yie Tsay² (1.Kindai Univ., 2.Feng Chia Univ.)

Keywords:

UV sensor

Ga-Sn-O is an amorphous transparent oxide semiconductor and its TFT, memory and thermoelectric properties have been reported. In this study, as a new application of Ga-Sn-O, we report the fabrication of Ga-Sn-O-based MSM (Metal-Semiconductor-Metal) UV sensors deposited by the sol-gel method and the effect of the Ga:Sn ratio in the precursor solution on the thin films and photodetection properties.