[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-40] Generation of Ca-Mg-Zn-O₂ Mixture Plasma by Inductively Coupled Discharge

〇Naoyuki Sato¹, Tihomir Cuzovic¹, Daiki Ishida¹, Kyouhei Hosaka¹, Kaoru Yamashita¹ (1.Ibaraki Univ.)

Keywords:

transparent conducting films,plasma processing,Ca-Mg-Zn-O2 mixture plasma

We have synthesized ZnO transparent conducting films (ZnO-TCF) with sheet resistance Rs in the 1 Ω/sq range and average light transmittance of over 80%, which are comparable to ITO, by using Zn-O2 mixed plasma with inductively coupled discharge. We believe that it is possible to generate and control metal-oxygen mixed plasma in the same way when other metals are introduced, and we are observing the interaction of plasma with alkaline earth metal vapors, which are more abundant than Zn, with full spectrum TCF in mind. In addition to the previous introduction of Ca, Mg vapor is introduced into the oxygen plasma to generate a Ca-Mg-Zn-O2 mixed plasma. CaO and MgO, which are metal oxide thin films, are generally insulators. However, by inducing a shift in stoichiometry and elemental substitutions by this plasma process method, it is expected that electrical conductivity will develop even without the introduction of Zn.