[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-6] Theoretical investigation of structural stability of Ga₂O₃ on a-Al₂O₃(0001) substrate

〇koki Ishida¹, Akiyama Toru¹, Kawamura Takahiro¹ (1.Mie Univ.)

Keywords:

Ga2O3,Interfacial mechanism

Ga2O3 is attracting attention as a next-generation power semiconductor material because of its large band gap (4.8~5eV), which enables high breakdown voltage and low loss. α-Ga2O3 formation has also been reported and its potential as a power device material is expected. However, β-Ga2O3 may be formed depending on the growth conditions of Ga2O3 on α-Al2O3(0001) substrate. In this study, we discuss the formation mechanism of α-Ga2O3 and the stability of the interfacial structure by interfacial energy calculations. We consider α-Al2O3{0001}||α-Ga2O3{0001} and α-Al2O3{0001}||β-Ga2O3{-201} as the calculation model and calculate the interface formation energy for each.