Presentation Information
[15p-P12-8]Homoepitaxial growth on β-Ga2O3 (010), (001) and (100) substrates by mist-CVD method
〇Kazuaki Akaiwa1, Taketoshi Tomida2, Yongzhao YAO3, Koichi Kakimoto2, Akira Yoshikawa2 (1.Tottori univ., 2.Tohoku univ., 3.Mie univ.)
Keywords:
Gallium Oxide,Oxide semiconductor
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