[15p-P12-1~40] 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" (Poster)

[15p-P12-9] Preparation of (GaIn)₂O₃ Alloy Thin Films by Chemical Solution Deposition using Aqueous Precursor Solutions and Their Application as UV Sensors

〇(M1C)Akito Horibe¹, Yoshifumi Taniguchi¹, Manami Miyazaki¹, Iori Yamasaki¹, Masatoshi Koyama¹, Nobuya Hiroshiba¹, Kazuto Koike¹ (1.Osaka Inst. of Tech.)

Keywords:

Gallium Indium Oxide,UV Sensor,solution coating pyrolysis method

Gallium oxide (Ga₂O₃) with a band gap of about 4.9 eV is a candidate material for deep UV sensors. We have successfully prepared Ga₂O₃ thin films by a solution coating pyrolysis method based on aqueous gallium chloride solutions. If the band gap can be controlled by alloying with indium oxide (In₂O₃), the detection wavelength can be controlled. In this study, (GaIn)₂O₃ alloyed thin films were deposited by solution coating pyrolysis and the current response to UV-A, -B and -C irradiation was investigated.