[16a-K101-1~11] 17.3 Layered materials

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K101-1] Oxygen-assisted CVD of Low-defect WS₂ and its electronics characterization by back-gate device fabrication

〇Kohei Nanjo¹, Sugisaki Hayato¹, Jui Han Fu¹, Vincent Tung¹ (1.Tokyo Univ.)

Keywords:

CVD,WS2,transistor

Chemical Vapor Deposition (CVD) synthesis is suitable for the large-area production of two-dimensional materials; however, it presents issues in film quality, such as defect formation. In this study, we employed oxygen as the ambient gas during the CVD process to suppress defect formation and synthesize high-quality films with high fluorescence intensity. Furthermore, we fabricated back-gate devices using the synthesized films and investigated their electrical properties.