The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Layered materials

[16a-K101-1~11]17.3 Layered materials

Sun. Mar 16, 2025 9:00 AM - 12:00 PM JST
Sun. Mar 16, 2025 12:00 AM - 3:00 AM UTC
K101 (Lecture Hall Bldg.)
Shinichiro Mouri(Ritsumeikan Univ.)
PR
SonySemiconductor
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K101-1]Oxygen-assisted CVD of Low-defect WS2 and its electronics characterization by back-gate device fabrication

〇Kohei Nanjo1, Sugisaki Hayato1, Jui Han Fu1, Vincent Tung1 (1.Tokyo Univ.)
Comment()
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-K101-2]Two-Step Annealing process for High-Coverage MoS2 on 4inch Wafer

〇Shinichi Tanabe1, Hitoshi Miura1, Naoya Okada2, Toshifumi Irisawa2, Yu min Huang1, Hisashi Warashina1, Hao Cheng1, Atsuki Fukazawa1, Hiroki Maehara1 (1.Tokyo Electron, 2.AIST)
Comment()
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-K101-3]Development of a Two-Step Annealing Method for MoS2 formation

〇Naoya Okada1, Toshifumi Irisawa1, Shinichi Tanabe2, Hitoshi Miura2, Yumin Huang2, Warashina Hisashi2, Hao Cheng2, Atsuki Fukazawa2, Hiroki Maehara2 (1.SFRC, AIST, 2.Tokyo Electron Ltd.)
Comment()
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-K101-4]Coating precursor / catalyst solutions for MoS2 CVD growth on Si substrate

〇Ryunosuke Nishimura1, Kentaro Watanabe1,2 (1.Shinshu Univ., 2.Shinshu Univ. IFES)
Comment()
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K101-5]Low-particle-flux sputtering of thin MoS2 film at low temperature

〇Shinya Imai1, Iriya Muneta1, Kuniyuki Kakushima1, Tetsuya Tatsumi1, Shigetaka Tomiya1, Hitoshi Wakabayashi1 (1.Institute of Science Tokyo)
Comment()
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-K101-6]Large Scale Growth of α-MoO3 Single Crystal

〇Yui Ogawa1, Yoshiharu Krockenberger1, Makoto Kawano1, Ufuk Erkilic1, Yoshitaka Taniyasu1 (1.NTT BRL)
Comment()
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K101-7]Versatility of IH-SHS method for synthesis of MAX Phases

〇Harumi Sakamoto1, Daisuke Nishine1, Mahito Yamamoto1, Mitsuru Inada1 (1.Kansai Univ.)
Comment()
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K101-8]Composition control of self-catalyzed VLS-grown GaSxSe1-x nanobelt

〇Yukihiro Endo1, Nathan Bochard1, Yoshiaki Sekine1, Yoshitaka Taniyasu1 (1.NTT Basic Res. Labs.)
Comment()
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-K101-9]Exploration of growth conditions
for the formation of metastable layered material SiTe2 thin films

〇Kohki Tonoike1, Shogo Hatayama2, Mihyeon Kim1, Yuta Saito1,2,3 (1.Tohoku Univ., 2.AIST, SFRC, 3.Tohoku Univ. GXT)
Comment()
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-K101-10]Effect of annealing temperature and film thickness on crystallization behavior of metastable layered semiconductor material GeTe2 thin film

〇(M1)Yu Kato1, Shogo Hatayama2, Mihyeon Kim1, Yuta Saito1,3 (1.Tohoku Univ., 2.SFRC, AIST, 3.GXT, Tohoku Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[16a-K101-11]Investigation of plasma-surface reaction mechanism in hexagonal boron nitride crystal growth by microwave PE-CVD

〇Yukihiro Muta1, Masahito Sugiura1, Takashi Matsumoto1 (1.Tokyo Electron Technology Solutions Ltd.)
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