[16a-K101-1~11] 17.3 Layered materials

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[16a-K101-11] Investigation of plasma-surface reaction mechanism in hexagonal boron nitride crystal growth by microwave PE-CVD

〇Yukihiro Muta¹, Masahito Sugiura¹, Takashi Matsumoto¹ (1.Tokyo Electron Technology Solutions Ltd.)

Keywords:

hexagonal boron nitride,2D material,CFET

We are working on the development of h-BN film deposition technology for the Logic A3 generation 2D material CFET. It has been found that h-BN deposited using N₂ as the nitrogen source in this process has better orientation and grain size than that deposited using NH₃, but the reason for this remains unclear. Here, we report on the important points for the deposition of highly oriented h-BN films based on the consideration of the reaction mechanism by the analysis of reactive species in the plasma using OES.