[16a-K101-1~11] 17.3 Layered materials

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K101-8] Composition control of self-catalyzed VLS-grown GaS_xSe_1-x nanobelt

〇Yukihiro Endo¹, Nathan Bochard¹, Yoshiaki Sekine¹, Yoshitaka Taniyasu¹ (1.NTT Basic Res. Labs.)

Keywords:

III-VI semiconductor,self-catalyzed VLS growth,metalorganic chemical vapor deposition

In this study, metalorganic chemical vapor deposition (MOCVD) was used to grow GaS_xSe_1-x nanobelts with various composition ratios (x) via self-catalyzed vapor-liquid-solid (VLS) growth. We investigated the composition ratio dependence on the VI source gas ratio. The dependence was analyzed by a kinetic equation model based on the self-catalyzed VLS growth. As a result, we found that the desorption/crystallization rate ratio of S is higher than that of Se. The S’s larger vapor pressure than Se’s can explain it.