[16a-K103-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-K103-5] Real-time temperature measurement of silicon wafer surface in cryogenic environment using Optical Interference Contactless Thermometry (OICT)

〇(M2)Ryunosuke Goto¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Keywords:

temperature measurement,cryogenic temperature

In recent years, a new process to control wafer temperature at cryogenic temperatures has been developed in semiconductor manufacturing, and there is a need to establish a method to measure temperatures in cryogenic regions in a non-contact manner. We have developed an OICT that utilizes interference of reflected light accompanying temperature changes of a wafer, and have succeeded in real-time measurement of silicon wafer surface temperature. In this study, we have attempted real-time OICT measurements in cryogenic regions, which had not been verified previously, and compared the results with thermocouple readings.