[16a-K103-1~10] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-K103-9] Microwave heating of ion implanted silicon wafers

〇Satoshi Fujii¹, Soma Shimabukuro¹, Akira Uedono² (1.N.I.T, Okinawa Col., 2.Tsukba Univ.)

Keywords:

Microwave heating,minimal fab.,Slow positron

Microwave annealing (MWA) can greatly increase the reaction rate because of the localized effect of microwave absorption by specific components on the solid surface. Therefore, impurity activation annealing using MWA has been investigated. We have conducted microwave simulations and experiments using a single-mode resonator for minimal wafers. As a result, it was confirmed that MWA heats the Si surface with Joule heating and produces the same level of sheet resistance and fewer defects at lower temperatures than other methods.