[16a-K202-1~6] Atomic Layer Process (ALP) analysis and application technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-K202-2] Reducing film resistivity and reaction mechanism analysis of Mo-ALD using Mo(CO)₆

〇(M2)Soken Obara¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

Keywords:

Molybdenum Atomic Layer Deposition,Molybdenum hexacarbonyl,Hydrazine