Session Details
[16a-K202-1~6]Atomic Layer Process (ALP) analysis and application technologies
Sun. Mar 16, 2025 9:30 AM - 12:00 PM JST
Sun. Mar 16, 2025 12:30 AM - 3:00 AM UTC
Sun. Mar 16, 2025 12:30 AM - 3:00 AM UTC
K202 (Lecture Hall Bldg.)
Satoshi Hamaguchi(Osaka Univ.), Yukihiro Shimogaki(Univ. of Tokyo)
[16a-K202-1]Prediction and control of coverage and film properties on large-scale pattern for deposition process of Si dielectric films
〇Nobuyuki Kuboi1 (1.Sony Semiconducor Solutions)
[16a-K202-2]Reducing film resistivity and reaction mechanism analysis of Mo-ALD using Mo(CO)6
〇(M2)Soken Obara1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[16a-K202-3]ZrN-ALD process development for barrier layer of ULSI-Cu interconnect
〇(M2)Jun Tanaka1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.The Univ. Tokyo)
[16a-K202-4]RT adsorption of Rudense® on Ru oxide surfaces and its oxidization
〇Satoshi Suzaki1, Haruto Suzuki2, Ryo Miyazawa2, Yuki Yamamoto3, Hiroyuki Oike3, Ryosuke Ebihara3, Shuya Ikemura3, Hajime Goto3, Kohei Iwanaga3, Fumihiko Hirose2 (1.Faculty of Engineering Yamagata Univ., 2.Yamagata Univ., 3.Tosoh Corp.)
[16a-K202-5]Atomic Layer Process (ALP) for Metal Oxide Thin Films: Enhancing Selectivity and Inhibitors’ Role
Hae Lin Yang1, Gyeong Min Jeong1, i-Hyeon Kwon1, Min Chan Kim1, 〇Jin-Seong Park1 (1.Hanyang University)
[16a-K202-6]High selective atomic layer etching in combination with area-selective deposition
〇Masanaga Fukasawa1 (1.SFRC, AIST)