[16a-K202-1~6] Atomic Layer Process (ALP) analysis and application technologies

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-K202-3] ZrN-ALD process development for barrier layer of ULSI-Cu interconnect

〇(M2)Jun Tanaka¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.The Univ. Tokyo)

Keywords:

barrier layer of Cu interconnect,zirconium nitride,atomic layer deposition