[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K301-1] A Study on Measurement of Commercial SiC MOSFETs at Cryogenic Temperature

〇Eiji Nakagawa¹, Hajime Takayama¹, Michihiro Shintani¹ (1.Kyoto Institute of Technology)

Keywords:

cryogenic temperature,SiC MOSFET

With the increasing interest in cryogenic power electronics, the characterization of SiC power MOSFETs at cryogenic temperatures is required. In this study, we evaluate the characteristics of commercial SiC MOSFETs in the temperature range from room temperature to 7 K. The measurement results of the transfer characteristics show that the threshold voltage monotonically increases as the temperature decreases, and the transconductance increases significantly at cryogenic temperatures. The measured input capacitance characteristics also indicate the monotonic increase of the threshold voltage against the lowering temperature. On the other hand, we identified some challenges due to the limitation of the measurement instrument.