The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[16a-K301-1~13]13.7 Compound and power devices, process technology and characterization

Sun. Mar 16, 2025 9:00 AM - 12:30 PM JST
Sun. Mar 16, 2025 12:00 AM - 3:30 AM UTC
K301 (Lecture Hall Bldg.)
Dai Okamoto(Toyama Prefectural Univ. )
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K301-1]A Study on Measurement of Commercial SiC MOSFETs at Cryogenic Temperature

〇Eiji Nakagawa1, Hajime Takayama1, Michihiro Shintani1 (1.Kyoto Institute of Technology)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-2]Polarity control of photoinduced carriers at SiC MOS interface at room temperature

〇(D)Tetsuhiro Owa1, Jin Miura1, Fumiyuki Inamura1, Takashi Ikuta1, Kenzo Maehashi1, Kenji Ikushima1 (1.Tokyo Univ. of A & T)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-3]NO annealing time dependance of AC-BTI in SiC MOSFET

〇(B)Aoi Koyasu1, Ryosuke Shingo1, Noriyuki Iwamuro1, Hiroshi Yano1 (1.Univ. of Tsukuba)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-4]Analysis of SiC MOSFET Short-circuit Failure Mechanism at Low DC Biases

〇(M1)Kaito Kashimura1, Kazuhiro Suzuki1, Hiroshi Yano1, Noriyuki Iwamuro1 (1.University of Tsukuba)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-5]Modeling of SiC MOSFETs based on physical understanding of interface defects

〇Xilun Chi1, Koji Ito1, Takeru Suto2, Akio Shima2, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ., 2.Hitachi)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-K301-6]Evaluation of interface state density based on an approximate expression for the drain current considering electron capture by interface states

〇Ryuya Kobayashi1, Hajime Tanaka1, Nobuya Mori1 (1.Osaka Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-K301-7]Characterization of SiC/SiO2 interface states near the valence band edge by conductance method

〇Kyota Mikami1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-8]Investigation of the surface N density saturation behaviors and its possible origins during N radical nitridation process on 4H-SiC surfaces

〇(M1)Haruki Yoshida1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-9]Anomalous enhancement of carbon-related defect formation in 4H-SiC by thermal oxidation prior to high temperature Ar ambient annealing

〇(DC)Chuyang Lyu1, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-K301-10]Time-resolved spin-dependent-charge-pumping (SDCP) spectroscopy: Development and its application to 4H-SiC MOSFETs

〇Yoshiki Yokoyama1, Hiroshi Yano1, Mitsuru Sometani2, Hirohisa Hirai2, Heiji Watanabe3, Takahide Umeda1, Sosuke Horiuchi1, Hiroski Fukunaga1, Bunta Shimabukuro1 (1.Tsukuba Univ., 2.AIST, 3.Osaka Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[16a-K301-11]Interface state density reduction by a process combining nitrogen incorporation at 4H-SiC/SiO2 interface by NO and boron doping in SiO2

〇Tatsumi Nakashima1, Munetaka Noguchi2, Shiro Hino2, Takashi Onaya1, Koji Kita1 (1.GSFS, The Univ. of Tokyo, 2.Advanced Technology R&D Center, Mitsubishi Electric Corporation)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-12]Interface characteristics of MOS structure formed by NO direct oxynitridation of 4H-SiC(0001) and their improvement by ultrathin Si layer insertion

〇Yutaro Uchida1, Takashi Onaya2, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[16a-K301-13][The 2nd Kenji Natori Award Speech] Study of 4H-SiC pixel sensors for radiation-resistant image sensor

〇Masayuki Tsutsumi1, Tatsuya Meguro1, Akinori Takeyama2, Takeshi Ohshima2, Yasunori Tanaka3, Shin-Ichiro Kuroki1 (1.RIND,Hiroshima Univ., 2.QST, 3.AIST)
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