[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-K301-10] Time-resolved spin-dependent-charge-pumping (SDCP) spectroscopy: Development and its application to 4H-SiC MOSFETs

〇Yoshiki Yokoyama¹, Hiroshi Yano¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takahide Umeda¹, Sosuke Horiuchi¹, Hiroski Fukunaga¹, Bunta Shimabukuro¹ (1.Tsukuba Univ., 2.AIST, 3.Osaka Univ.)

Keywords:

semiconductor,Electrically detected magnetic resonance (EDMR),SiC

Electrically detected magnetic resonance (EDMR) is known as an effective method for revealing the atomic structure of defects at the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) interface. In addition, the conventional technique of charge pumping can reveal the interface state density at the MOS interface by detecting the output CP current. From previous research, spin-dependent charge pumping (SDCP) has been developed using CP current. Conventional SDCP methods rely on time-averaged CP current. In contrast, we have developed a time-resolved SDCP method that can analyze the time-varying CP current induced by the CP technique.