[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-12] Interface characteristics of MOS structure formed by NO direct oxynitridation of 4H-SiC(0001) and their improvement by ultrathin Si layer insertion

〇Yutaro Uchida¹, Takashi Onaya², Koji Kita^1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)

Keywords:

SiC,NO oxynitridation

Although the importance of the process of introducing nitrogen to the SiC substrate surface using heat treatment in NO is already clear, further improvement of the interface properties is expected by devising the NO process and adding pretreatment. Therefore, in this study, we proposed a process to deposit an ultrathin Si layer on a 4H-SiC(0001) substrate followed by NO oxynitridation to form MOS structure, and investigated the effect of this process on the interface properties.