[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-3] NO annealing time dependance of AC-BTI in SiC MOSFET

〇(B)Aoi Koyasu¹, Ryosuke Shingo¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

Keywords:

SiC MOSFET,Threshold voltage variation,Gate AC Stress

The SiC/SiO₂ interface in SiC MOSFETs contains a large number of interface states and oxide defects, which trap carriers and cause threshold voltage variation (ΔVth). The ΔVth observed when an AC signal is applied to the gate electrode is referred to as AC-BTI and has recently attracted attention as a reliability indicator. In this study, we evaluated the AC-BTI of n-channel and p-channel SiC MOSFETs subjected to varying durations of nitridation treatment, which is effective in reducing the density of interface states (Dit).