[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-5] Modeling of SiC MOSFETs based on physical understanding of interface defects

〇Xilun Chi¹, Koji Ito¹, Takeru Suto², Akio Shima², Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Hitachi)

Keywords:

MOSFET,mobility,interface defects

In SiC MOSFETs, electron trapping due to the interface defects and electron scattering by trapped electrons occur simultaneously, which makes device modeling challenging. In this study, we focused on the influence of the location of interface defects on device characteristics and performed numerical calculations of free electron mobility by changing the location of trapped electrons. By considering electron trapping and scattering caused by the interface defects located in the SiC side of the MOS system, we developed the first physics-based models that can explain both the experimental Hall mobilities and gate characteristics of SiC MOSFETs across a wide range of temperature.