[16a-K301-1~13] 13.7 Compound and power devices, process technology and characterization

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K301-9] Anomalous enhancement of carbon-related defect formation in 4H-SiC by thermal oxidation prior to high temperature Ar ambient annealing

〇(DC)Chuyang Lyu¹, Takashi Onaya¹, Koji Kita¹ (1.GSFS, The Univ. of Tokyo)

Keywords:

SiC,thermal oxidation,Ar ambient

We have previously reported that annealing in a high-temperature Ar atmosphere induces the precipitation of carbon defects containing C-C bonds near the SiC surface, as observed by attenuated total reflection Fourier-transform infrared spectroscopy (ATR-FTIR). While it is generally known that thermal oxidation leads to the formation of carbon-related defects in SiC substrates, the generation of such carbon defects was almost completely suppressed when a small partial pressure of oxygen (Po₂, approximately a few Pa) was present in the Ar atmosphere. However, it is reasonable to assume that thermal oxidation has some promoting effect on the formation of carbon defects. Therefore, in this study, we investigated the promoting effect of pre-thermal oxidation on the subsequent generation of carbon-related defects during high-temperature annealing in an Ar atmosphere.