[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-K310-1] Epitaxial growth of vertical InP nanowires on Si(111) substrate by self-catalyzed vapor-liquid-solid approach

〇Guoqiang Zhang¹, Haoche Zhou¹, Hiroki Hibino², Hideki Gotoh³, Haruki Sanada¹ (1.NTT BRL, 2.Kwansei Gakuin Univ., 3.Hiroshima Univ.)

Keywords:

semiconductor,nanowire,silicon

Epitaxial growth of InP semiconductor on Si substrates and their integration as telecom-band optical devices are highly desirable for the realization of opto-electronic integration circuit (OEIC). However, the epitaxial growth of InP on Si is challenging due to three-dimensional (3D) island nucleation of InP on Si. Here we report epitaxial growth of vertical InP nanowires on Si(111) substrates by the self-catalyzed vapor-liquid-solid (VLS) approach. This was achieved by inserting an InAs interfacial disk grown by the selective area epitaxy (SAE) approach between InP nanowires and Si substrates.