[16a-K310-1~8] 15.3 III-V族エピタキシャル結晶・エピタキシーの基礎

9:30 〜 9:45

[16a-K310-1] Si(111)基板上に自己触媒法InPナノワイヤの垂直エピタキシャル成長

〇章 国強¹、Haochen Zhou¹、日比野 浩樹²、後藤 秀樹³、眞田 治樹¹ (1.NTT物性基礎研、2.関西学院大、3.広島大)

キーワード：

半導体、ナノワイヤ、シリコン

Epitaxial growth of InP semiconductor on Si substrates and their integration as telecom-band optical devices are highly desirable for the realization of opto-electronic integration circuit (OEIC). However, the epitaxial growth of InP on Si is challenging due to three-dimensional (3D) island nucleation of InP on Si. Here we report epitaxial growth of vertical InP nanowires on Si(111) substrates by the self-catalyzed vapor-liquid-solid (VLS) approach. This was achieved by inserting an InAs interfacial disk grown by the selective area epitaxy (SAE) approach between InP nanowires and Si substrates.