[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 72nd JSAP Spring Meeting 2025

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16a-K310-1~8]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sun. Mar 16, 2025 9:30 AM - 11:30 AM JST
Sun. Mar 16, 2025 12:30 AM - 2:30 AM UTC

K310 (Lecture Hall Bldg.)

Takaaki Mano(NIMS), Fumitaro Ishikawa(Hokkaido Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-K310-1]Epitaxial growth of vertical InP nanowires on Si(111) substrate by self-catalyzed vapor-liquid-solid approach

〇Guoqiang Zhang¹, Haoche Zhou¹, Hiroki Hibino², Hideki Gotoh³, Haruki Sanada¹ (1.NTT BRL, 2.Kwansei Gakuin Univ., 3.Hiroshima Univ.)

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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-K310-2]Growth of InAs thin films by lateral overgrowth from InAs nanowires on Si substrates

〇(B)Junichi Acharya¹, Toshiyuki Kaizu^1,2, Naoya Miyashita^1,2, Koichi Yamaguchi^1,2 (1.Dep. of Eng. Sci., Univ. Electro-Comm., 2.QFCD2 center, Univ. Electro-Comm.)

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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-K310-3]Sb segregation in GaAs/GaInNAsSb core-multishell nanowires

〇Takuto Goto^1,2, Kaito Nakama^1,2, Hidetoshi Hashimoto^1,2, Keisuke Minehisa^1,2, Mattias Jansson³, Weimin M. Chen³, Irina A. Buyanova³, Fumitaro Ishikawa² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE, 3.Linkoping Univ.)

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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-K310-4]Growth and Characteristics of Nitrogen δ-doped GaAs Nanowires Grown by Molecular Beam Epitaxy

〇(B)Mahiro Sano^1,3, Keisuke Minehisa^2,3, Hidetoshi Hashimoto^2,3, Fumitaro Ishikawa³ (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)

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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K310-5]Temperature dependence of luminescence properties of dilute nitride InGaAsN quantum dots grown at low temperature

〇Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.Hokkaido Univ.)

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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K310-6]1.5-μm-band Quantum Dot Lasers with Low-Indium-Composition Partial Capping

〇JINKWAN KWOEN¹, Jihye Jung¹, Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.NanoQuine, U. Tokyo)

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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-K310-7]Preparation of quantum structures using stacked submonolayer growth by controlling the density of sublying quantum dots

〇Haruto Okuizumi¹, Ronel Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-K310-8]Emission Changes in InAs/GaAsSb Superlattices Fabricated by Metal-Organic Vapor Phase Epitaxy with As Composition

〇(M1)Masaharu Okuda¹, Masakazu Arai¹, Takeshi Fuzisawa², Hidetoshi Suzuki¹, Koji Maeda¹ (1.Miyazaki Univ., 2.Hosei Univ.)

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