[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[16a-K310-2] Growth of InAs thin films by lateral overgrowth from InAs nanowires on Si substrates

〇(B)Junichi Acharya¹, Toshiyuki Kaizu^1,2, Naoya Miyashita^1,2, Koichi Yamaguchi^1,2 (1.Dep. of Eng. Sci., Univ. Electro-Comm., 2.QFCD2 center, Univ. Electro-Comm.)

Keywords:

quantum nanowire,InAs thin film growth,molecular beam epitaxy