[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-K310-4] Growth and Characteristics of Nitrogen δ-doped GaAs Nanowires Grown by Molecular Beam Epitaxy

〇(B)Mahiro Sano^1,3, Keisuke Minehisa^2,3, Hidetoshi Hashimoto^2,3, Fumitaro Ishikawa³ (1.Hokkaido Univ., 2.Hokkaido Univ. Info., 3.Hokkaido Univ. RCIQE)

Keywords:

Nanowires,Nitrogen,delta-doping