[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K310-5] Temperature dependence of luminescence properties of dilute nitride InGaAsN quantum dots grown at low temperature

〇Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.Hokkaido Univ.)

Keywords:

quantum dot,dilute nitride semiconductor,photoluminescence