[16a-K310-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K310-6] 1.5-μm-band Quantum Dot Lasers with Low-Indium-Composition Partial Capping

〇JINKWAN KWOEN¹, Jihye Jung¹, Masahiro Kakuda¹, Yasuhiko Arakawa¹ (1.NanoQuine, U. Tokyo)

Keywords:

quantum dot,molecular beam epitaxy

Quantum dot lasers on InP substrates are expected to be applied as light source materials for ultra-high-speed optical transceivers exceeding 10 Tbps due to their excellent thermal properties, resistance to optical feedback, and low power consumption in long-wavelength regions. Notably, fabrication methods using only arsenic-based materials on InP substrates have garnered attention not only for reducing production costs but also for suppressing defects caused by interdiffusion between group V elements, arsenic, and phosphorus. We reported that introducing a low-indium composition partial capping layer enables wide-range wavelength tuning in quantum dot fabrication on InP. In this paper, we report on the fabrication of quantum dot lasers using this method and investigate their characteristics.