[16a-K504-1~6] 6.6 Probe Microscopy

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K504-6] Development of variable-time-sweep local CV profiling method using time-resolved scanning nonlinear dielectric microscopy with under-sampling technique

〇(M1)Tomohiro Suzuki^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

Keywords:

scanning nonlinear dielectric microscopy,scanning probe microscope,semiconductor

The evaluation of the defect states at the interface between the gate insulator and the semiconductor in the MIS structure is important because the characteristics of metal-insulator-semiconductor field-effect transistors depend on it. In this study, we developed a method to realize variable-time-sweep local CV profiling using time-resolved scanning nonlinear dielectric microscopy. To obtain accurate local CV profiles for long sweep time, under-sampling (US) is introduced for signal acquisition. Our result shows that the sweep time can be extended from µs order to ms order.