[16a-K508-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K508-1] Etching of SiO2 wiring trenches using new electrolytic technology

〇Haruo Iwatsu¹, Satoko Shinkai², Ryouko Ono² (1.KMP Lavatory, 2.Kyushu Institute of technology)

Keywords:

interconnection

With conventional wet etching, the profile is isotropic, but with the new electrolytic technology, we will examine the possibility of anisotropy and directivity. In the wiring process, wiring trench are plasma-etched into an insulating film, and wiring material Cu is embedded by electrolytic plating via a barrier and seed film. Recently, wiring materials such as Co and Ru, which do not require a high-resistance barrier film, are being considered. With the new electrolytic technology, we are aiming for an integrated process that wet-etches wiring trench in the insulating film and then embeds Ru plating continuously.