The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16a-K508-1~11]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sun. Mar 16, 2025 9:00 AM - 12:00 PM JST
Sun. Mar 16, 2025 12:00 AM - 3:00 AM UTC
K508 (Lecture Hall Bldg.)
Masaya Kawano(Univ of Tokyo)
PRSonySemiconductor
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-K508-1]Etching of SiO2 wiring trenches using new electrolytic technology

〇Haruo Iwatsu1, Satoko Shinkai2, Ryouko Ono2 (1.KMP Lavatory, 2.Kyushu Institute of technology)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-K508-2]Ru wiring plating on SiO2 using new electorolytic technology

〇Haruo Iwatsu1, Satoko Shinkai2, Ryouko Ono2 (1.KMP Lavatory, 2.Kyushu Institute of technology)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-K508-3]Atomistic Simulation Based Analysis of Size Effect of Ru

〇Takahisa Tanaka1 (1.Keio Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-K508-4]Cu-deposition on Shallow-trench by Area-selective CVD using CuI-precursor

〇Yu Miyamoto1, Satoshi Yamauchi1 (1.Ibaraki Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-K508-5]Simulation of Via Filling Copper Plating using the Pulse-Reverse Plating Method

〇LIZHU TONG1, Tatsuhiko Nagayama1 (1.Keisoku Eng. Sys.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K508-6]The effect of degassing on void expansion suppression in the hybrid bonding.

〇Ayato Ohgata1, Ayako Kawanishi1, Ippei Kume1, Arita Koji1, Hideyuki Yamawaki1 (1.KIOXIA)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-K508-7]Characterization of SiCN Bonding Mechanisms for Hybrid Bonding

〇Taisuke Yamamoto1, Hayato Kitagawa1, Ryosuke Sato1, Sodai Ebiko1, Tomohiro Sakata2, Fumihiro Inoue1 (1.YOKOHAMA Nat.Univ., 2.Toray Research Center)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-K508-8]Surface Characterization for Bonding Dynamics in Wafer Bonding

〇Ryota Ogata1, Ryosuke Sato1, Hayato Kitagawa1, Sodai Ebiko1, Fumihiro Inoue1 (1.YOKOHAMA Nat. Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K508-9]Development of Solid-Phase Bonding Method of Metals using High-Density Hydrogen Plasma

〇Reo Yasuda1, Masato Ota1, Hiroaki Kakiuchi1, Hiromasa Ohmi1 (1.Osaka Univ.)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K508-10]Evaluation and study of AlN thin film at around 400°C by TMA/NH3 FM-CVD

〇(P)Yuhei Otaka1, Ritsuki Sato1, Jun Yamaguchi1, Noboru Sato1, Atsuhiro Tsukune1, Yukihiro Shimogaki1 (1.Univ. Tokyo)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K508-11]Evaluation of Lateral Distribution of Si Strain around TSV by Micro-Raman Spectroscopy

〇Ryota Fujimori1, Yuta Ito1, Ryo Yokogawa2, Atsushi Ogura1,2, Rikiichi Ohno3, Koichiro Saga3, Hayato Iwamoto3 (1.Meiji Univ., 2.MREL, 3.Sony Semiconductor Solutions)
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