[16a-K508-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-K508-10] Evaluation and study of AlN thin film at around 400°C by TMA/NH₃ FM-CVD

〇(P)Yuhei Otaka¹, Ritsuki Sato¹, Jun Yamaguchi¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

Keywords:

3DICs,AlN,CVD

To improve the heat dissipation characteristics of three-dimensional integrated circuits (3DICs), the insulating film on the TSV inner wall is replaced from SiO₂ to AlN. Due to the thermal resistance of the chip, AlN thin film growth at temperatures below 400°C is required. In this study, Flow Modulation (FM)-CVD, in which raw material (trimethylaluminum) is supplied intermittently, was introduced to improve AlN film quality and obtain high thermal conductivity at around 400°C. The quality and step coverage of the grown AlN film were evaluated from various aspects.