[16a-K508-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-K508-2] Ru wiring plating on SiO2 using new electorolytic technology

〇Haruo Iwatsu¹, Satoko Shinkai², Ryouko Ono² (1.KMP Lavatory, 2.Kyushu Institute of technology)

Keywords:

interconnection

Traditionally, fine interconnections in semiconductor integrated circuits have been created using the damascene process, in which copper is embedded through a barrier film by electrolytic plating. Recently, Ru wiring, which does not require a barrier film, is being adopted instead of copper wiring. Ru wiring is generally formed by dry etching after CVD film formation, which is called subtract technology. In order to shorten the process, we used a new electrolytic technology to perform Ru plating directly on barrier and seedless oxide films, vias and trenches.