[16a-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-Y1311-3] Atomic Layer Deposition of Crystalline Ga-doped In₂O₃ Ultrathin Film and their Field-effect Transistor Application

〇Takanori Takahashi¹, Hoshii Takuya², Tsuruma Yuki³, Sunagawa Misa³, Tomai Shigekazu³, Park Jongho², Tamamoto Hiroki², Kakushima Kuniyuki², Uraoka Yukiharu¹ (1.NAIST, 2.Science Tokyo, 3.Idemitsu Kosan Co., Ltd.)

Keywords:

oxide semiconductor,field-effect transistor,atomic layer deposition