The 72nd JSAP Spring Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-Y1311-1~9]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 16, 2025 9:00 AM - 11:30 AM JST
Sun. Mar 16, 2025 12:00 AM - 2:30 AM UTC
Y1311 (Bldg. 13)
Shinya Aikawa(Kougakuin Univ.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-Y1311-1]Precise dielectric constant analysis of IGZO by using IGZO MOS capacitors

〇Toya Murashima1, Xuanhedong Gao1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Tokyo Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-Y1311-2]Electronic States of Nanosheet Oxide Semiconductor at the Electrode-Oxide Interface

〇SUNBIN HWANG1, Kota Sakai3, Takanori Takahashi2, Mutsunori Uenuma1, Yukiharu Uraoka2, Masaharu Kobayashi3 (1.AIST, 2.NAIST, 3.IIS The Univ. Tokyo)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-Y1311-3]Atomic Layer Deposition of Crystalline Ga-doped In2O3 Ultrathin Film and their Field-effect Transistor Application

〇Takanori Takahashi1, Hoshii Takuya2, Tsuruma Yuki3, Sunagawa Misa3, Tomai Shigekazu3, Park Jongho2, Tamamoto Hiroki2, Kakushima Kuniyuki2, Uraoka Yukiharu1 (1.NAIST, 2.Science Tokyo, 3.Idemitsu Kosan Co., Ltd.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[16a-Y1311-4]Impact of thermal annealing and channel thickness on electrical characteristics and instability of ultrathin AlOx/InOx FETs

〇CHIATSONG CHEN1, Kasidit Toprasertpong2, Toshifumi Irisawa1, Shinji Migita1, Wen-Hsin Chang1, Yukinori Morita1, Hiroyuki Ota1, Tatsuro Maeda1 (1.AIST, 2.hte Univ. of Tokyo)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-Y1311-5]Fabrication of Oxide Semiconductor Thin Films by Mist-CVD Method and Improvement of Transistor Performance

〇KEIGO EBATO1 (1.Nihon Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-Y1311-6]Ultra-Thin In2O3 Films Deposited by Mist CVD Method Using InCl3

〇(M1C)Ryo Ishikawa1, Yuya Hayashi1, Shinya Aikawa1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguti1 (1.Kogakuin Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-Y1311-7]Mist CVD growth of rocksalt-structured MgZnO alloys in the metastable phase composition range

〇Kyosuke Tanaka1, Kotaro Ogawa1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-Y1311-8]Impedance characteristics of ZnGa2O4 thin film under deep UV irradiation and its temperature dependence

〇Reiya Kase1, Ryunosuke Maeda1, Yuya Oguma1, Kazunuki Yamamoto2, Satoshi Ishii1 (1.Tokyo Denki Univ., 2.Chiba Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-Y1311-9]Influence of Nitrogen Doping and Oxygen Annealing on ZnO Films

〇Yumika Yamada1,2, Haruki Ohmori2, Shuhei Funaki2, Yasuji Yamada2 (1.Kobelco Res. Inst. Inc., 2.Shimane Univ.)
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