[16a-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-Y1311-5] Fabrication of Oxide Semiconductor Thin Films by Mist-CVD Method and Improvement of Transistor Performance

〇KEIGO EBATO¹ (1.Nihon Univ.)

Keywords:

semiconductor,Mist CVD

Cost reduction is a major issue in semiconductor device manufacturing. Thin film manufacturing processes account for a large proportion of the total cost. Mist-CVD has the advantages of being safer, lower cost, and less environmentally hazardous than sputtering or plasma CVD. In this study, we report the results of an investigation into the performance improvement of TFTs using atomic oxygen processing and TFTs using O₃ added to the carrier gas. The TFT characteristics using O₃ added to the carrier gas improved both the ON current and mobility, but the OFF current deteriorated. In contrast, we confirmed that the TFT characteristics using atomic oxygen processing improved both the ON current, OFF current, and mobility compared to those using O₃ added to the carrier gas. We believe that impurities were not completely removed from the TFTs using O₃ added to the carrier gas, but were properly removed from the TFTs using atomic oxygen processing. We confirmed that the gas pressure for atomic oxygen processing was 5 Pa, which is the optimal value for TFT manufacturing.