[16a-Y1311-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-Y1311-8] Impedance characteristics of ZnGa₂O₄ thin film under deep UV irradiation and its temperature dependence

〇Reiya Kase¹, Ryunosuke Maeda¹, Yuya Oguma¹, Kazunuki Yamamoto², Satoshi Ishii¹ (1.Tokyo Denki Univ., 2.Chiba Univ.)

Keywords:

ZnGa2O4,impedance,crystal grain

We had confirmed that the electrical resistance of thin films prepared using hydrothermally synthesized ZnGa₂O₄ nanoparticles and that the electrical resistance decreased with increase of the annealing temperature during fabrication through the crystalline structure of grains and grain boundaries. In this study, we evaluated the temperature dependence of AC impedance under deep UV irradiation in order to clarify the electrical conduction mechanism of grains and grain boundaries in terms of activation energy.