[16p-K203-1~10] Novel functional oxide materials, devices, techniques for next generation transistor channel application

2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[16p-K203-3] A Chemical Approach to the fabrication of High-Dielectric constant Oxide Thin Films by ALD

〇Yasutaka Matsuo¹, Akihiro Nishida^1,2 (1.RIES, Hokkaido Univ., 2.ADEKA Corp.)

Keywords:

Atomic layer deposition,high-k

We have synthesized a new liquid metal-organic material for the preparation of high-k constant oxide thin films by atomic layer deposition method. As a result, good dielectric properties were obtained, indicating that the new materials are industrially practical. In addition, we show that a chemical approach, such as extending the temperature range of the deposition process, can improve the ALD process compared to existing materials.