The 72nd JSAP Spring Meeting 2025
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Symposium (Oral)Symposium : Novel functional oxide materials, devices, techniques for next generation transistor channel application

[16p-K203-1~10]Novel functional oxide materials, devices, techniques for next generation transistor channel application

Sun. Mar 16, 2025 1:30 PM - 5:40 PM JST
Sun. Mar 16, 2025 4:30 AM - 8:40 AM UTC
K203 (Lecture Hall Bldg.)
Hiroshi Kumigashira(Tohoku Univ.), Jobu Matsuno(Osaka Univ.)
1:30 PM - 1:35 PM JST(4:30 AM - 4:35 AM UTC)

[16p-K203-1]Introductory Talk

〇Hidekazu Tanaka1 (1.SANKEN, Osaka Univ.)
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1:35 PM - 2:05 PM JST(4:35 AM - 5:05 AM UTC)

[16p-K203-2]Research on device scaling for oxide semiconductor transistors

〇Masaharu Kobayashi1,2 (1.Univ. Tokyo, d.lab, 2.Univ. Tokyo, IIS)
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2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[16p-K203-3]A Chemical Approach to the fabrication of High-Dielectric constant Oxide Thin Films by ALD

〇Yasutaka Matsuo1, Akihiro Nishida1,2 (1.RIES, Hokkaido Univ., 2.ADEKA Corp.)
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2:35 PM - 3:05 PM JST(5:35 AM - 6:05 AM UTC)

[16p-K203-4]Mass Production of 2D Nanocarbons and Their Applications

〇Yuta Nishina1 (1.Okayama Univ.)
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3:05 PM - 3:20 PM JST(6:05 AM - 6:20 AM UTC)

[16p-K203-5]Design of Resistive Switching Functionality on Phase Change Oxide Thin Films on Hexagonal Born Nitride using Local Nano-Structures

〇(M2)Yuki Tomita1, Haobo Li1, Azusa Hattori1, Shu Nakaharai3, Yutaka Wakayama4, Kenji Watanabe4, Takashi Taniguchi4, Hidekazu Tanaka1,2 (1.SANKEN, 2.OTRI, 3.Tokyo Univ. of Tech., 4.NIMS)
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3:35 PM - 4:05 PM JST(6:35 AM - 7:05 AM UTC)

[16p-K203-6]Challenges and Opportunities of Oxide Semiconductor Transistors for High-Speed Memory

〇Shoichi Kabuyanagi1, Shosuke Fujii1 (1.KIOXIA Corporation)
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4:05 PM - 4:35 PM JST(7:05 AM - 7:35 AM UTC)

[16p-K203-7]An approach to the social implementation of oxide power semiconductors with excellent passive component characteristics as active component

〇Kentaro Kaneko1 (1.RItsumeikan Semicon. Appl. res. cent. (RISA))
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4:35 PM - 5:05 PM JST(7:35 AM - 8:05 AM UTC)

[16p-K203-8]Spin transistors based on correlated oxides

〇Shinobu Ohya1,2, Tatsuro Endo1, Aoi Nakamura1, Masaaki Tanaka1,2 (1.EEIS, The Univ. of Tokyo, 2.CSRN, The Univ. of Tokyo)
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5:05 PM - 5:35 PM JST(8:05 AM - 8:35 AM UTC)

[16p-K203-9]Highly Reliable Oxide Thin-Film Transistors with High Mobility demanded for Next Generation Flat Panel Displays

〇Yusaku Magari1, Hiromichi Ohta1 (1.RIES-Hokkaido Univ.)
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5:35 PM - 5:40 PM JST(8:35 AM - 8:40 AM UTC)

[16p-K203-10]For the next 100 years

〇Hiroyuki Akinaga1 (1.AIST-DTech)
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