[16p-K203-1~10] Novel functional oxide materials, devices, techniques for next generation transistor channel application

3:35 PM - 4:05 PM JST(6:35 AM - 7:05 AM UTC)

[16p-K203-6] Challenges and Opportunities of Oxide Semiconductor Transistors for High-Speed Memory

〇Shoichi Kabuyanagi¹, Shosuke Fujii¹ (1.KIOXIA Corporation)

Keywords:

Memory,Oxide semiconductor,Ferroelectric

Rapid advances in Artificial Intelligence and Machine Learning are increasing the demand for high-speed and high-density memory. To overcome the limitation of conventional Si-based memories, oxide semiconductor transistor as memory application is attracting much attention. In this presentation, we discuss the opportunities and challenges of oxide semiconductor for high-speed and high-density memory application.