[16p-K203-1~10] Novel functional oxide materials, devices, techniques for next generation transistor channel application

4:35 PM - 5:05 PM JST(7:35 AM - 8:05 AM UTC)

[16p-K203-8] Spin transistors based on correlated oxides

〇Shinobu Ohya^1,2, Tatsuro Endo¹, Aoi Nakamura¹, Masaaki Tanaka^1,2 (1.EEIS, The Univ. of Tokyo, 2.CSRN, The Univ. of Tokyo)

Keywords:

strongly correlated oxide,spin transistor,magnetoresistance

Spin MOSFET is a transistor that enables non-volatile memory and is anticipated as a next-generation device. However, due to the challenges of interface control between ferromagnetic materials and semiconductors, the magnetoresistance (MR) ratio has been limited to 1-10%. In this study, we successfully fabricated a spin MOSFET with a semiconductor channel formed by introducing oxygen vacancies into a nano region of the strongly correlated oxide (La,Sr)MnO₃, achieving a large MR ratio of 140%